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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Modeling of a new liner stressor comprising Ge2Sb2Te5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

โœ Scribed by Cheng, Ran; Ding, Yinjie; Liu, Bin; Yeo, Yee-Chia


Book ID
126676024
Publisher
IEEE
Year
2011
Weight
335 KB
Category
Article
ISBN
1457717557

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