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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Effects of oxygen content and capping metal layer on bipolar switching properties of HfO2-based resistive random access memory devices

✍ Scribed by Li, Chen-Chien; Chang-Liao, Kuei-Shu; Chen, Ying-Chan; Fu, Chung-Hao; Liu, Li-Jung; Wang, Tien-Ko

Book ID: 120091079
Publisher: IEEE
Year: 2011
Weight: 502 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/ISDRS.2011.6135389

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