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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Comparison of HfOx-based resistive memory devices with crystalline and amorphous active layers

✍ Scribed by Briggs, Benjamin D.; Bishop, Seann M.; Capulong, Jihan O.; Hovish, Mike Q.; Matyi, Richard J.; Cady, Nathaniel C.

Book ID: 120091080
Publisher: IEEE
Year: 2011
Weight: 405 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/ISDRS.2011.6135419

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