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[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model

✍ Scribed by Rideau, D.; Quenette, V.; Garetto, D.; Dornel, E.; Weybright, M.; Manceau, J. P; Saxod, O.; Tavernier, C.; Jaouen, H.

Book ID: 121218903
Publisher: IEEE
Year: 2010
Weight: 204 KB
Category: Article
ISBN: 1424469120
DOI: 10.1109/ICMTS.2010.5466816

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