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[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - New RF intrinsic parameters extraction procedure for advanced MOS transistors

✍ Scribed by Tinoco, J. C.; Martinez-Lopez, A. G.; Emam, M.; Raskin, J.-P.

Book ID: 118216793
Publisher: IEEE
Year: 2010
Weight: 127 KB
Volume: 0
Category: Article
ISBN: 1424469120
DOI: 10.1109/icmts.2010.5466853

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