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[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Reliability and breakdown characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer

✍ Scribed by Das, T.; Mahata, C.; Dalapati, G.K; Chi, D.; Sutradhar, G.; Bose, P.K.; Maiti, C. K.

Book ID: 126676004
Publisher: IEEE
Year: 2010
Weight: 361 KB
Category: Article
ISBN: 1424455960
DOI: 10.1109/IPFA.2010.5532235

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