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[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - A Model for Switching Traps in Amorphous Oxides

✍ Scribed by Goes, Wolfgang; Grasser, Tibor; Karner, Markus; Kaczer, Ben

Book ID: 126673798
Publisher: IEEE
Year: 2009
Weight: 163 KB
Category: Article
DOI: 10.1109/SISPAD.2009.5290226

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