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[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks

✍ Scribed by Nigam, T.; Kerber, A.; Peumans, P.

Book ID: 120055304
Publisher: IEEE
Year: 2009
Weight: 833 KB
Category: Article
ISBN: 1424428882
DOI: 10.1109/IRPS.2009.5173307

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