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[IEEE 2009 IEEE International Integrated Reliability Workshop (IRW) - South Lake Tahoe, CA, USA (2009.10.18-2009.10.22)] 2009 IEEE International Integrated Reliability Workshop Final Report - Bias Stability of zinc-tin-oxide thin film transistors with Al2O3 gate dielectrics

✍ Scribed by Triska, Josh; Conley, John F.; Presley, Rick; Wager, John F.

Book ID: 126599807
Publisher: IEEE
Year: 2009
Weight: 267 KB
Category: Article
ISBN: 1424439213
DOI: 10.1109/IRWS.2009.5383025

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