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[IEEE 2009 IEEE International Integrated Reliability Workshop (IRW) - South Lake Tahoe, CA, USA (2009.10.18-2009.10.22)] 2009 IEEE International Integrated Reliability Workshop Final Report - Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs)

✍ Scribed by Sonnet, A. M.; Galatage, R. V.; Jivani, M. N.; Milojevic, M.; Chapman, R. A.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

Book ID: 126594732
Publisher: IEEE
Year: 2009
Weight: 347 KB
Category: Article
ISBN: 1424439213
DOI: 10.1109/IRWS.2009.5383036

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