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[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

✍ Scribed by Chevalier, P.; Pourchon, F.; Lacave, T.; Avenier, G.; Campidelli, Y.; Depoyan, L.; Troillard, G.; Buczko, M.; Gloria, D.; Celi, D.; Gaquiere, C.; Chantre, A.

Book ID: 126709229
Publisher: IEEE
Year: 2009
Weight: 359 KB
Category: Article
ISBN: 1424448948
DOI: 10.1109/BIPOL.2009.5314250

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