𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - 168 GHz dynamic frequency divider in SiGe:C bipolar technology

✍ Scribed by Knapp, Herbert; Meister, Thomas F.; Liebl, Wolfgang; Aufinger, Klaus; Schafer, Herbert; Bock, Josef; Boguth, Sabine; Lachner, Rudolf

Book ID: 121315585
Publisher: IEEE
Year: 2009
Weight: 226 KB
Category: Article
ISBN: 1424448948
DOI: 10.1109/BIPOL.2009.5314242

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Parametric mismatch characterization for mixed-signal technologies

✍ Tuinhout, Hans; Wils, Nicole 📂 Article 📅 2009 🏛 IEEE ⚖ 763 KB

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

✍ Chevalier, P.; Pourchon, F.; Lacave, T.; Avenier, G.; Campidelli, Y.; Depoyan, L 📂 Article 📅 2009 🏛 IEEE ⚖ 359 KB

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Low-power K-band pseudo-stacked mixer with linearity enhancement technique

✍ Shiramizu, Nobuhiro; Masuda, Toru; Nakamura, Takahiro; Washio, Katsuyoshi 📂 Article 📅 2009 🏛 IEEE ⚖ 586 KB

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

✍ Tagro, Y.; Gloria, D.; Boret, S.; Lepillet, S.; Dambrine, G. 📂 Article 📅 2009 🏛 IEEE ⚖ 687 KB

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices

✍ Ngwendson, L.; Sweet, M. R.; Narayanan, E. M. Sankara 📂 Article 📅 2009 🏛 IEEE ⚖ 616 KB

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits

[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

✍ Rucker, H.; Heinemann, B.; Winkler, W.; Barth, R.; Borngraber, J.; Drews, J.; Fi 📂 Article 📅 2009 🏛 IEEE ⚖ 317 KB