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[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

✍ Scribed by Tagro, Y.; Gloria, D.; Boret, S.; Lepillet, S.; Dambrine, G.

Book ID: 126609462
Publisher: IEEE
Year: 2009
Weight: 687 KB
Category: Article
ISBN: 1424448948
DOI: 10.1109/BIPOL.2009.5314138

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