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[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

✍ Scribed by Rucker, H.; Heinemann, B.; Winkler, W.; Barth, R.; Borngraber, J.; Drews, J.; Fischer, G. G.; Fox, A.; Grabolla, T.; Haak, U.; Knoll, D.; Korndorfer, F.; Mai, A.; Marschmeyer, S.; Schley, P.; Schmidt, D.; Schmidt, J.; Schulz, K.; Tillack, B.; Wolansky, D.; Yamamoto, Y.

Book ID: 121341745
Publisher: IEEE
Year: 2009
Weight: 317 KB
Category: Article
ISBN: 1424448948
DOI: 10.1109/BIPOL.2009.5314251

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