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[IEEE 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST) - Mumbai, India (2009.06.1-2009.06.2)] 2009 2nd International Workshop on Electron Devices and Semiconductor Technology - Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

✍ Scribed by Rao, Rathnamala; Katti, Guruprasad; DasGupta, Nandita; DasGupta, Amitava

Book ID: 127169810
Publisher: IEEE
Year: 2009
Weight: 672 KB
Category: Article
ISBN: 1424438314
DOI: 10.1109/edst.2009.5166108

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