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[IEEE 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST) - Mumbai, India (2009.06.1-2009.06.2)] 2009 2nd International Workshop on Electron Devices and Semiconductor Technology - Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

✍ Scribed by Maji, Debabrata; Crupi, F.; Magnone, P.; Giusi, G.; Pace, C.; Simoen, E.; Rao, V. Ramgopal

Book ID: 126748862
Publisher: IEEE
Year: 2009
Weight: 400 KB
Category: Article
ISBN: 1424438314
DOI: 10.1109/EDST.2009.5166133

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