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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Mobility of strained and unstrained short channel FD-SOI MOSFETs: New insight by magnetoresistance

✍ Scribed by Casse, M.; Rochette, F.; Bhouri, N.; Andrieu, F.; Maude, D.K.; Mouis, M.; Reimbold, G.; Boulanger, F.

No coin nor oath required. For personal study only.

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