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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

✍ Scribed by Huang, J.; Kirsch, P. D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; Gilmer, D. C.; Kelly, D. Q.; Sivasubramani, P.; Bersuker, G.; Heh, D.; Young, C.; Park, C.S.; Tan, Y. N.; Goel, N.; Park, C.; Hung, P.Y.; Lysaght, P.; Choi, K. J.; Cho, B. J.; Tseng, H.-H.; Lee, B. H.; Jammy, R.

Book ID: 121363453
Publisher: IEEE
Year: 2008
Weight: 659 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588571

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