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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories

✍ Scribed by Hirotaka Hamamura, ; Takeshi Ishida, ; Toshiyuki Mine, ; Yutaka Okuyama, ; Digh Hisamoto, ; Yasuhiro Shimamoto, ; Shin'ichiro Kimura, ; Kazuyoshi Torii,

Book ID: 121307977
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 403 KB
Edition: 46
Category: Article
ISBN: 1424420490
DOI: 10.1109/RELPHY.2008.4558920

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