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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Mobility degradation due to interface traps in plasma oxynitride PMOS devices

✍ Scribed by Islam, Ahmad Ehteshamul; Maheta, Vrajesh D.; Das, Hitesh; Mahapatra, Souvik; Alam, Muhammad Ashraful

No coin nor oath required. For personal study only.

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