𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

✍ Scribed by Krishnamohan, Tejas; Kim, Donghyun; Thanh Viet Dinh, ; Pham, Anh-tuan; Meinerzhagen, Bernd; Jungemann, Christoph; Saraswat, Krishna

Book ID: 125842864
Publisher: IEEE
Year: 2008
Weight: 837 KB
Category: Article
ISBN: 1424423775
DOI: 10.1109/IEDM.2008.4796845

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2008 IEEE International Electron D

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

✍ Zhao, Yi; Takenaka, Mitsuru; Takagi, Shinichi 📂 Article 📅 2008 🏛 IEEE ⚖ 363 KB

[IEEE 2008 IEEE International Electron D

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

✍ Persson, S.; Fjer, M.; Escobedo-Cousin, E.; Malm, G.; Wang, Y.-B.; Hellstrom, P. 📂 Article 📅 2008 🏛 IEEE ⚖ 770 KB

[IEEE 2008 IEEE International Electron D

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

✍ Krishnamohan, Tejas; Kim, Donghyun; Raghunathan, Shyam; Saraswat, Krishna 📂 Article 📅 2008 🏛 IEEE ⚖ 620 KB

[IEEE 2008 IEEE International Electron D

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

✍ Kishi, T.; Yoda, H.; Kai, T.; Nagase, T.; Kitagawa, E.; Yoshikawa, M.; Nishiyama 📂 Article 📅 2008 🏛 IEEE ⚖ 699 KB

[IEEE 2008 IEEE International Electron D

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array

✍ Natarajan, S.; Armstrong, M.; Bost, M.; Brain, R.; Brazier, M.; Chang, C.-H.; Ch 📂 Article 📅 2008 🏛 IEEE ⚖ 503 KB