✦ LIBER ✦

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

✍ Scribed by Krishnamohan, Tejas; Kim, Donghyun; Raghunathan, Shyam; Saraswat, Krishna

No coin nor oath required. For personal study only.

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