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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Enhancing SRAM cell performance by using independent double-gate FinFET

✍ Scribed by Endo, Kazuhiko; O'uchi, Shin-ichi; Yuki Ishikawa, ; Liu, Yongxun; Takashi Matsukawa, ; Kunihiro Sakamoto, ; Junichi Tsukada, ; Kenichi Ishii, ; Hiromi Yamauchi, ; Eiichi Suzuki, ; Meishoku Masahara,

Book ID: 121209105
Publisher: IEEE
Year: 2008
Weight: 594 KB
Category: Article
ISBN: 1424423775
DOI: 10.1109/IEDM.2008.4796833

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