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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

✍ Scribed by Zhao, Yi; Takenaka, Mitsuru; Takagi, Shinichi

Book ID: 125525315
Publisher: IEEE
Year: 2008
Weight: 363 KB
Category: Article
ISBN: 1424423775
DOI: 10.1109/IEDM.2008.4796755

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