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[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation

✍ Scribed by Tsuno, H.; Anzai, K.; Matsumura, M.; Minami, S.; Honjo, A.; Koike, H.; Hiura, Y.; Takeo, A.; Fu, W.; Fukuzaki, Y.; Kanno, M.; Ansai, H.; Nagashima, N.

Book ID: 127391870
Publisher: IEEE
Year: 2007
Tongue: Japanese
Weight: 491 KB
Category: Article
ISBN: 4900784036
DOI: 10.1109/vlsit.2007.4339693

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