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[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs

✍ Scribed by Irisawa, T.; Numata, T.; Toyoda, E.; Hirashita, N.; Tezuka, T.; Sugiyama, N.; Takagi, S.

No coin nor oath required. For personal study only.

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