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[IEEE 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Anaheim, CA, USA (2007.09.16-2007.09.21)] 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Double well field effect diode: Lateral SCR-like device for ESD protection of I/Os in deep sub micron SOI

✍ Scribed by Salman, Akram A.; Beebe, Stephen G.; Pelella, Mario M.

Book ID: 126689051
Publisher: IEEE
Year: 2007
Weight: 715 KB
Category: Article
ISBN: 158537136X
DOI: 10.1109/EOSESD.2007.4401750

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