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[IEEE 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Bangalore, India (2007.07.11-2007.07.13)] 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Comparison of Negative Bias Temperature Instability in HfSiO(N)/TaN and SiO(N)/poly-Si pMOSFETs

✍ Scribed by Maheta, V. D.; Purawat, S.; Gupta, G.

Book ID: 126618788
Publisher: IEEE
Year: 2007
Weight: 381 KB
Category: Article
ISBN: 1424410150
DOI: 10.1109/IPFA.2007.4378064

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