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[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Au/Pt/Ti-Si3N4 interfacial defects analysis of a stressed SiGe HBT by using STEM nanometric characterization

✍ Scribed by Alaeddine, A.; Genevois, C.; Chevalier, L.; Daoud, K.

Book ID: 118266075
Publisher: IEEE
Year: 2012
Weight: 833 KB
Category: Article
ISBN: 1467309826
DOI: 10.1109/ipfa.2012.6306286

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