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[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

✍ Scribed by Starkov, I.; Enichlmair, H.; Tyaginov, S.; Grasser, T.

Book ID: 118265303
Publisher: IEEE
Year: 2012
Weight: 572 KB
Category: Article
ISBN: 1467309826
DOI: 10.1109/ipfa.2012.6306266

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