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[IEEE 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (2006.7.3-2006.7.3)] 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

✍ Scribed by Zhang, Y.; Ang, D.s.; Kuan, H.p.; Tan, K.t.

Book ID: 121527866
Publisher: IEEE
Year: 2006
Tongue: un
Weight: 954 KB
Category: Article
ISBN-13: 9781424402069
DOI: 10.1109/IPFA.2006.251001

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