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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Investigation of the low-field leakage through high-k interpoly dielectric stacks and its impact on nonvolatile memory data retention

✍ Scribed by Govoreanu, B.; Wellekens, D.; Haspeslagh, L.; De Vos, J.; Van Houdt, J.

Book ID: 126654528
Publisher: IEEE
Year: 2006
Weight: 798 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346818

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