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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

✍ Scribed by Lee, Dongsoo; Seong, Dong-jun; Choi, Hye jung; Jo, Inhwa; Dong, R.; Xiang, W.; Oh, Seokjoon; Pyun, Myeongbum; Seo, Sun-ok; Heo, Seongho; Jo, Minseok; Hwang, Dae-Kyu; Park, H. K; Chang, M.; Hasan, M.; Hwang, Hyunsang

Book ID: 121695241
Publisher: IEEE
Year: 2006
Weight: 510 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/iedm.2006.346733

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