✦ LIBER ✦

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

✍ Scribed by Joh, Jungwoo; del Alamo, Jesus A.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2006 International Electron Device

✍ Micovic, M.; Kurdoghlian, A.; Hashimoto, P.; Hu, M.; Antcliffe, M.; Willadsen, P 📂 Article 📅 2006 🏛 IEEE ⚖ 278 KB

[IEEE 2006 International Electron Device

✍ Chen, Gang; Dames, Chris; Henry, Asegun 📂 Article 📅 2006 🏛 IEEE ⚖ 868 KB

[IEEE 2006 International Electron Device

✍ Cros, Antoine; Romanjek, Krunoslav; Fleury, Dominique; Harrison, Samuel; Cerutti 📂 Article 📅 2006 🏛 IEEE ⚖ 346 KB

[IEEE 2006 International Electron Device

✍ Hosoi, Y.; Tamai, Y.; Ohnishi, T.; Ishihara, K.; Shibuya, T.; Inoue, Y.; Yamazak 📂 Article 📅 2006 🏛 IEEE ⚖ 751 KB

[IEEE 2006 International Electron Device

✍ Gardner, Donald S.; Schrom, Gerhard; Hazucha, Peter; Paillet, Fabrice; Karnik, T 📂 Article 📅 2006 🏛 IEEE ⚖ 986 KB

[IEEE 2006 International Electron Device

✍ Gambino, J.; Leidy, B.; Adkisson, J.; Jaffe, M.; Rassel, R. J.; Wynne, J.; Ellis 📂 Article 📅 2006 🏛 IEEE ⚖ 946 KB