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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - High Speed Unipolar Switching Resistance RAM (RRAM) Technology

✍ Scribed by Hosoi, Y.; Tamai, Y.; Ohnishi, T.; Ishihara, K.; Shibuya, T.; Inoue, Y.; Yamazaki, S.; Nakano, T.; Ohnishi, S.; Awaya, N.; Inoue, I. H.; Shima, H.; Akinaga, H.; Takagi, H.; Akoh, H.; Tokura, Y.

Book ID: 121237716
Publisher: IEEE
Year: 2006
Weight: 751 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346732

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