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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode

✍ Scribed by Fang, Tzu-Ning; Kaza, Swaroop; Haddad, Sameer; Chen, An; Wu, Yi-Ching (Jean); Lan, Zhida; Avanzino, Steven; Liao, Dongxiang; Gopalan, Chakku; Choi, Seungmoo; Mahdavi, Sara; Buynoski, Matthew; Lin, Yvonne; Marrian, Christie; Bill, Colin; VanBuskirk, Michael; Taguchi, Masao

Book ID: 121872850
Publisher: IEEE
Year: 2006
Weight: 307 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346731

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