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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Impact of Stochastic Mismatch on Measured SRAM Performance of FinFETs with Resist/Spacer-Defined Fins: Role of Line-Edge-Roughness

✍ Scribed by Dixit, A.; Anil, K. G.; Baravelli, E.; Roussel, P.; Mercha, A.; Gustin, C.; Bamal, M.; Grossar, E.; Rooyackers, R.; Augendre, E.; Jurczak, M.; Biesemans, S.; De Meyer, K.

Book ID: 121247403
Publisher: IEEE
Year: 2006
Weight: 278 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346884

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