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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

✍ Scribed by Oh, J.H.; Park, J.H.; Lim, Y.S.; Lim, H.S.; Oh, Y.T.; Kim, J.S.; Shin, J.M.; Park, J.H.; Song, Y.J.; Ryoo, K.C.; Lim, D.W.; Park, S.S.; Kim, J.I.; Kim, J.H.; Yu, J.; Yeung, F.; Jeong, C.W.; Kong, J.H.; Kang, D.H.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kim, Kinam

Book ID: 120027354
Publisher: IEEE
Year: 2006
Weight: 353 KB
Category: Article
ISBN-13: 9781424404384
DOI: 10.1109/IEDM.2006.346905

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