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[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Gate oxide reliability of 4H-SiC MOS devices

✍ Scribed by Krishnaswami, S.; Das, M.; Hull, B.; Sei-Hyung Ryu, ; Scofield, J.; Agarwal, A.; Palmour, J.

Book ID: 120560990
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 401 KB
Edition: 2005
Category: Article
ISBN-13: 9780780388031
DOI: 10.1109/RELPHY.2005.1493158

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