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[IEEE 2004 IEEE International Reliability Physics Symposium. - Phoenix, AZ, USA (25-29 April 2004)] 2004 IEEE International Reliability Physics Symposium. Proceedings - A study of output power stability of GaN HEMTs on SiC substrates

✍ Scribed by Boutros, K.S.; Rowell, P.; Brar, B.

Book ID: 121751589
Publisher: IEEE
Year: 2004
Weight: 172 KB
Category: Article
ISBN-13: 9780780383159
DOI: 10.1109/RELPHY.2004.1315397

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