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[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

✍ Scribed by Rauch, S.E.; La Rosa, G.; Guarin, F.J.

Book ID: 121382371
Publisher: IEEE
Year: 2001
Weight: 697 KB
Category: Article
ISBN-13: 9780780365872
DOI: 10.1109/RELPHY.2001.922933

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