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[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

✍ Scribed by Manhas, S.K.; de Souza, M.M.; Gates, A.S.; Chetlur, S.C.; Sankara Narayanan, E.M.

Book ID: 121382370
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 355 KB
Edition: 38
Category: Article
ISBN-13: 9780780358607
DOI: 10.1109/RELPHY.2000.843899

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