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[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Hot carrier induced degradation in deep submicron MOSFETs at 100°C

✍ Scribed by Li, E.; Rosenbaum, E.; Register, L.F.; Tao, J.; Fang, P.

Book ID: 121382369
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 385 KB
Edition: 38
Category: Article
ISBN-13: 9780780358607
DOI: 10.1109/RELPHY.2000.843898

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