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[IEEE 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual - San Diego, CA, USA (23-25 March 1999)] 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - A model for channel hot carrier reliability degradation due to plasma damage in MOS devices

✍ Scribed by Rangan, S.; Krishnan, S.; Amerasekara, A.; Aur, S.; Ashok, S.

Book ID: 126647195
Publisher: IEEE
Year: 1999
Weight: 394 KB
Category: Article
ISBN-13: 9780780352209
DOI: 10.1109/RELPHY.1999.761641

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