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[IEEE 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual - San Diego, CA, USA (23-25 March 1999)] 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - Hot carrier effects in nMOSFETs in 0.1 μm CMOS technology

✍ Scribed by Li, E.; Rosenbaum, E.; Tao, J.; Yeap, G.C.-F.; Lin, M.-R.; Fang, P.

Book ID: 121382368
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 406 KB
Edition: 37
Category: Article
ISBN-13: 9780780352209
DOI: 10.1109/RELPHY.1999.761622

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