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[IEEE 2000 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (23-26 Oct. 2000)] 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) - The different gate oxide degradation mechanism under constant voltage/current stress and ramp voltage stress

✍ Scribed by Hongwei Luo, ; Yunfei En, ; Xuedong Kong, ; Xiaoming Zhang,

Book ID: 126764697
Publisher: IEEE
Year: 2000
Weight: 222 KB
Category: Article
ISBN-13: 9780780363922
DOI: 10.1109/IRWS.2000.911922

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