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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Robust, 1000 V, 130 mΩ-cm/sup 2/, lateral, two-zone RESURF MOSFETs in 6H-SiC

✍ Scribed by Banerjee, S.; Chow, T.P.; Gutmann, R.J.

Book ID: 126738441
Publisher: IEEE
Year: 2000
Weight: 422 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016173

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