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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Dynamics of maximum junction temperature of power MOSFETs

✍ Scribed by Chung, Y.S.; Baird, B.

Book ID: 120071252
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 328 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016192

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