𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Thin-layer silicon-on-insulator high-voltage PMOS device and application

✍ Scribed by Letavic, T.; Albu, R.; Dufort, B.; Petruzzello, J.; Simpson, M.; Mukherjee, S.; Weijland, I.; van Zwol, H.

Book ID: 126765417
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 341 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016174

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - IGBT driver chipset for high power applications

✍ Herzer, R.; Pawel, S.; Lehmann, J. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 480 KB

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Switching performance of low-voltage N-channel trench MOSFETs

✍ Hueting, R.J.E.; Hijzen, E.A.; Ludikhuize, A.W.; 't Zandt, M.A.A. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 371 KB

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Dynamics of maximum junction temperature of power MOSFETs

✍ Chung, Y.S.; Baird, B. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 328 KB

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Switching properties of 2 kV SiC-SIT

✍ Onose, H.; Watanabe, A.; Someya, T.; Kobayashi, Y. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 353 KB

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 3 kV 600 A 4H-SiC high temperature diode module

✍ Sugawara, Y.; Takayama, D.; Asano, K.; Singh, R.; Kodama, H.; Ogata, S.; Hayashi 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 300 KB

[IEEE 14th International Symposium on Po

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 750 A, 75 V MOSFET power module with sub-nH inductance

✍ Mourick, P.; Steger, J.; Tursky, W. 📂 Article 📅 2000 🏛 IEEE ⚖ 292 KB