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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 3 kV 600 A 4H-SiC high temperature diode module

✍ Scribed by Sugawara, Y.; Takayama, D.; Asano, K.; Singh, R.; Kodama, H.; Ogata, S.; Hayashi, T.

Book ID: 120604335
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 300 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016217

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